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Механика. Динамика

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Механика. Динамика

The Physics of Electron Spin Polarization in Magnetic Metals and the Injection of Spin Polarized Electrons in Ferromagnetic/Semiconductor Systems Spin Injection from Magnetic Thin Films into InGaAs Quantum Wells.

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Книга по Требованию    
3234 руб
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Pronounced minority spin band gaps were found in these alloys and while majority spins are metallic, minority spins undergo hole-like dispersion near the Fermi level. The spin injection characteristics are examined as a function of photon energy, magnetic field, applied bias, external optical efficiency and temperature. Further, the Heusler alloys Co2TiSn and Co2CrAl are investigated through ab initio electronic structure calculations as potentially highly polarised spin injectors. This work is an investigation into spin injection from magnetic thin film contacts into (100) GaAs/InGaAs quantum wells in spin light emitting diodes (spin LEDs). While spin injection is observed from both Heusler alloy and Fe injectors, Fe is a more efficient spin injector and gives room temperature results. The injection of spin polarised electrons into semiconductors is a fundamental challenge in the emergent field of spin electronics. This structure is relevant to many quantum dot device layers. The bias dependent spin injection shows a decrease at higher voltages due to hot electron spin transport in the semiconductor and shows similar trends for both types of spin injector.
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