With the scaling of devices, integration of porous ultra low-k materials into Cu interconnect becomes imperative. Second, plasma degrades properties of low-k materials through methyl depletion. It mainly consists of two parts. First, plasma assists the atomic layer deposition of Ta based Cu barriers. Low-k dielectric materials consist of methyl groups and pores incorporated into a silicon dioxide backbone structure to reduce the dielectric constant. Mechanism of plasma damage to blanket and pattern low-k films was discussed. Experiments, coupled with Monte Carlo simulation proved that plasma alters low-k surfaces and generates favorable surface function groups for subsequent Ta/TaN deposition. Then techniques for low-k repair, such as methane beam and silylation, were demonstrated. This book explores the interaction between plasma and low-k dielectric materials and their application in advanced semiconductor processes. Plasma is widely used in semiconductor industry for deposition, etching, stripping etc.
Plasma and Low-? Interaction and Application in Advanced Semiconductor Technology Dielectric Materials.
|Формат:|| Страниц 216|
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